mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 1 parameter value unit v ds @ t j,max 6 5 0 v r ds(on),max 0 . 75 ? v th,typ 3 v i d 5.7 a q g ,typ 15 n c order code marking temp. range package packing rohs status mm p60r75 0 p th 60r750p - 55 ~ 150 to - 220 tube halogen free mm p 60r75 0 p 600v 0.75 ? n - channel mosfet ? description mmp60r750 p is power mosfet using magnachip s advanced super junction technology that can realize very low on - resistance and gate charge. it will provide much high efficiency by using optimized charge coupling technology. these user friendly devices give an advantage of low emi to designers as well a s low switching loss . ? features ? low power loss by high speed switching and low on - resistance ? 100% avalanche tested ? green package C p b free plating, halogen free ? key paramete r s ? applications ? pfc power supply stages ? switching applications ? adapter ? motor control ? dc C dc converters d g s ? package & internal circui t ? ordering information g d s
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 2 parameter symbol rating unit note drain C s ource voltage v dss 600 v gate C source voltage v gss 30 v continuous drain current i d 5.7 a t c =25 3.6 a t c =100 pulsed drain current (1) i dm 17.1 a power dissipation p d 48 w single - pulse avalanche energy e as 75 mj mosfet dv/dt ruggedness dv/dt 50 v/ns diode dv/dt ruggedness dv/dt 15 v/ns storage temperature t stg - 55 ~150 maximum operating junction temperature t j 150 1) pulse width t p limited by t j,max 2) i sd i d , v ds peak v (br)dss parameter symbol value unit thermal resistance , junction - case max r thjc 2.6 /w thermal resistance , junction - ambient max r thja 62.5 /w ? thermal characteristics ? a bsolut e maximum rating (t c =25 unless otherwise specified)
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 3 ? static characteristics (t c =25 parameter symbol min. typ. max. unit test condition drain C s ource breakdown voltage v (br)dss 600 - - v v gs = 0v, i d =0.25ma gate threshold voltage v gs(th) 2 3 4 v v ds = v gs, i d =0.25 ma zero gate voltage drain current i dss - - 1 a v ds = 600v, v gs = 0v gate leakage current i gss - - 100 na v gs = 3 0v, v ds =0v drain - source on state resistance r ds(on) - 0. 68 0. 75 ? v gs = 10v, i d = 2.0 a parameter symbol min. typ. max. unit test condition input capacitance c iss - 575 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 430 - reverse transfer capacitance c rss - 20 - effective output capacitance energy related (3) c o(er) - 16 - v ds = 0v to 480v, v gs = 0v,f = 1.0mhz turn on delay time t d(on) - 11 - ns v gs = 10v, r g = 25, v ds = 300v, i d = 5.7 a rise time t r - 31 - turn off delay time t d(off) - 37 - fall time t f - 23 - total gate charge q g - 15 - nc v gs = 10v, v ds = 480v, i d = 5.7 a gate C source charge q gs - 4.5 - gate C drain charge q gd - 6 - gate resistance r g - 4.5 - ? v g s = 0v , f = 1.0mhz 3) c o(er) is a capacitance that gives the same stored energy as c oss while v ds is rising from 0v to 80% v (br)dss ? dynamic characteristics (t c =25 unless otherwise specified)
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 4 parameter symbol min. typ. max. unit test condition continuous diode forward current i sd - - 5.7 a diode forward voltage v sd - - 1.4 v i sd = 5.7 a, vgs = 0 v reverse recovery time t rr - 255 - ns i sd = 5.7 a di/dt = 100 a/s v dd = 100 v reverse recovery charge q rr - 1.7 - c reverse recovery current i r r m - 13.1 - a ? r e verse diode characteristics (t c =25 unless otherwise specified)
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 5
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 6
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 7
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 8 ? test circuit v d s 1 0 v 1 m a d u t 1 0 0 k 1 0 v s a m e t y p e a s d u t + - v d d d u t + - s a m e t y p e a s d u t v d s + - i s r g 1 0 k v g s 1 5 v l i f v d d d u t + - i d v d s v g s t p r l v d d d u t + - i a s v d s r g v g s t p l 1 0 v v g s c h a r g e q g q g s q g d v d s v g s 9 0 % 1 0 % t d ( o n ) t r t o n t d ( o f f ) t f t o f f v d d t p t a v v d s ( t ) b v d s s i a s r d s ( o n ) * i a s t r r t a t b i f m i r m d i / d t 0 . 2 5 i r m 0 . 7 5 i r m 0 . 5 i r m v r v r m ( r e c ) f i g 1 5 - 1 . g a t e c h a r g e m e a s u r e m e n t c i r c u i t f i g 1 5 - 2 . g a t e c h a r g e w a v e f o r m f i g 1 6 - 1 . d i o d e r e v e r s e r e c o v e r y t e s t c i r c u i t f i g 1 6 - 1 . d i o d e r e v e r s e r e c o v e r y t e s t w a v e f o r m f i g 1 7 - 1 . s w i t c h i n g t i m e t e s t c i r c u i t f o r r e s i s t i v e l o a d f i g 1 7 - 2 . s w i t c h i n g t i m e w a v e f o r m f i g 1 8 - 1 . u n c l a m p e d i n d u c t i v e l o a d t e s t c i r c u i t f i g 1 8 - 2 . u n c l a m p e d i n d u c t i v e w a v e f o r m r g 2 5
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 9 ? physical dimensions 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
mm p 60r75 0 p datasheet aug . 201 3 revision 1 .0 magnachip semiconductor ltd . 10 disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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